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| ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A SOT23-5 version is also available (ZXMP2120E5). SOT223 FEATURES * High voltage * Low on-resistance * Fast switching speed * Low gate drive * Low threshold * SOT223 package variant engineered to increase spacing between high voltage pins. APPLICATIONS * Active clamping of primary side MOSFETs in 48 volt DC-DC converters ORDERING INFORMATION DEVICE ZXMP2120G4TA ZXMP2120G4TC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1,000 units 4,000 units N/C PINOUT - TOP VIEW DEVICE MARKING ZXMP 2120 ISSUE 1 - DECEMBER 2005 1 ZXMP2120G4 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (VGS =10V; Tamb =25C) Pulsed Drain Current (c) (c) (a) SYMBOL V DS V GS ID I DM I SM P tot VALUE -200 20 -200 UNIT V V mA A A W mW/C C -1.2 -1.2 2.0 1.6 Pulsed Source Current (Body Diode) Power Dissipation at T amb =25C Linear derating factor (a) Operating and Storage Temperature Range T j :T stg -55 to +150 THERMAL RESISTANCE PARAMETER Junction to Ambient (a) SYMBOL R JA R JA VALUE 62.5 32 UNIT C/W C/W Junction to Ambient (b) NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - DECEMBER 2005 2 ZXMP2120G4 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) Static Drain-Source On-State Resistance (1) SYMBOL BV DSS V GS(th) I GSS I DSS MIN. -200 -1.5 -3.5 20 -10 -100 -300 25 50 100 25 7 7 15 12 15 MAX. UNIT V V nA A A mA mS pF pF pF ns ns ns ns V DD -25V, I D =-150mA V DS =-25V, V GS =0V, f=1MHz CONDITIONS I D =-1mA, V GS =0V I =-1mA, V DS = V GS D V GS = 20V, V DS =0V V DS =-200 V, V GS =0V V DS =-160 V, V GS =0V, T=125C (2) V DS =-25 V, V GS =-10V V GS =-10V, I D =-150mA V DS =-25V, I D =-150mA I D(on) R DS(on) Forward Transconductance (1)(2) g fs Input Capacitance (2) C iss C oss C rss t d(on) tr (2)(3) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time Rise Time (2)(3) (2)(3) Turn-Off Delay Time Fall Time (2)(3) t d(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle (R)2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ISSUE 1 - DECEMBER 2005 3 ZXMP2120G4 TYPICAL CHARACTERISTICS ISSUE 1 - DECEMBER 2005 4 ZXMP2120G4 CHARACTERISTICS ISSUE 1 - DECEMBER 2005 5 ZXMP2120G4 PACKAGE OUTLINE PAD LAYOUT DETAILS 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 mm inches 2.3 0.091 Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L Inches DIM Min Max Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 Millimeters Inches (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - DECEMBER 2005 6 |
Price & Availability of ZXMP2120G4TC
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